Paper
30 September 2005 Light emission from ZnSe nanowires
U. Philipose, Harry E. Ruda, T. Xu, S. Yang, P. Sun
Author Affiliations +
Abstract
Arrays of free-standing ZnSe nanowires of length 8-10 μm and diameter 60-150 nm were fabricated by Au-catalyzed vapor-liquid-solid growth. Electron microscopy showed that these were high quality single crystal nanowires. Photoluminescence (PL) measurements of the as-grown nanowires were characterized by weak near band edge emission and strong defect-related emission. The effect of post-growth annealing on the PL spectra under both Zn-rich and Se-rich conditions were studied. Annealing under a Zn-rich atmosphere was found to significantly enhance the near band edge emission and suppress deep-level emission, resulting in spectra dominated by the near band edge emission. On the other hand, annealing in a Se-rich atmosphere had the reverse effect, resulting in spectra dominated by deep level emission.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
U. Philipose, Harry E. Ruda, T. Xu, S. Yang, and P. Sun "Light emission from ZnSe nanowires", Proc. SPIE 5971, Photonic Applications in Nonlinear Optics, Nanophotonics, and Microwave Photonics, 597116 (30 September 2005); https://doi.org/10.1117/12.628675
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Cited by 2 scholarly publications.
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KEYWORDS
Nanowires

Annealing

Zinc

Edge emitting semiconductor lasers

Atmospheric optics

Luminescence

Crystals

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