1 June 1990 400 Hz frequency stability of a GaAlAs laser frequency locked to the Rb (D2) line
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Abstract
A commercial GaAIAs injection laser is frequency locked to the Rb (D2) transition. A relative frequency stability of 400 Hz is measured for a 24-s averaging time. The frequency stability of this device with only temperature control is 4 kHz. This is a factor of 20 improvement in the state of the art for temperature control stability for semiconductor lasers.
Yun Chur Chung and Thomas M. Shay "400 Hz frequency stability of a GaAlAs laser frequency locked to the Rb (D2) line," Optical Engineering 29(6), (1 June 1990). https://doi.org/10.1117/12.55630
Published: 1 June 1990
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CITATIONS
Cited by 6 scholarly publications and 4 patents.
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KEYWORDS
Rubidium

Semiconductor lasers

Laser stabilization

Control systems

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