Identification and elimination of trench crystal defects in sub-0.13-um era

Chun-Chen Yeh; Chung-Chen Chen; Tser-Hua Lu; Chia-Ming Shen; Jong-Hsian Chuang; Jon Lee; Chiang Fu; Ya-Dien Sheu

doi:10.1117/12.521724

2 April 2004 Identification and elimination of trench crystal defects in sub-0.13-μm era

Chun-Chen Yeh, Chung-Chen Chen, Tser-Hua Lu, Chia-Ming Shen, Jong-Hsian Chuang, Jon Lee, Chiang Fu, Ya-Dien Sheu

Proceedings Volume 5276, Device and Process Technologies for MEMS, Microelectronics, and Photonics III; (2004) https://doi.org/10.1117/12.521724
Event: Microelectronics, MEMS, and Nanotechnology, 2003, Perth, Australia

Abstract

A series of study of trench dislocation occurred in 0.13/0.18um CMOS technologies have been done. First, it is demonstrated for the first time that trench crystal dislocations can be detected successfully using current mapping atomic force microscopy (C-AFM). Different from conventional voltage contrast technique, which uses SEM image brightness for the comparison of leaky contacts/junctions and normal ones, C-AFM probes the surface of samples by contacting them directly and can provide I-V curve mapping data for each contact/junction where the needle passes. Thus a quantified contact/junction leakage current data is acquired and can be used to find out minor trench dislocation (located beneath the leaky contact), which works as a leakage source negligible before but crucial in 0.13um low power devices. Besides, a model concerning about the FEOL overall thermal budget is proposed to explain the formation of trench dislocations.

Citation Download Citation

Chun-Chen Yeh, Chung-Chen Chen, Tser-Hua Lu, Chia-Ming Shen, Jong-Hsian Chuang, Jon Lee, Chiang Fu, and Ya-Dien Sheu "Identification and elimination of trench crystal defects in sub-0.13-μm era", Proc. SPIE 5276, Device and Process Technologies for MEMS, Microelectronics, and Photonics III, (2 April 2004); https://doi.org/10.1117/12.521724

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