Influence of ionizing radiation on efficiency of photodiodes on the basis of gallium telluride

K. A. Askerov; F. K. Isayev; D. I. Karayev; R. Yu. Aliyev

doi:10.1117/12.517415

30 September 2003 Influence of ionizing radiation on efficiency of photodiodes on the basis of gallium telluride

K. A. Askerov, F. K. Isayev, D. I. Karayev, R. Yu. Aliyev

Proceedings Volume 5126, 17th International Conference on Photoelectronics and Night Vision Devices; (2003) https://doi.org/10.1117/12.517415
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

Influence of the nuclear explosion factors on basic parameters of photodiodes developed on the basis of layered gallium telluride crystals, operating in the spectral range 0.4 ÷ 1.1 μm has been studied. Results of study of the effect pulsing gamma-irradiation and pulsing neutron-irradiation show that photoreceivers on the basis of GaTe crystals is perspective for systems operating in visible and near IR-region.

Citation Download Citation

K. A. Askerov, F. K. Isayev, D. I. Karayev, and R. Yu. Aliyev "Influence of ionizing radiation on efficiency of photodiodes on the basis of gallium telluride", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); https://doi.org/10.1117/12.517415

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