Room-temperature photoluminescence of GeSi/Si(001) self-assembled islands in a 1.3-1.7 um wavelength range

Yu. N. Drozdov; Z. F. Krasil'nik; D. N. Lobanov; A. V. Novikov; Mikhail Ya. Valakh; N. V. Vostokov; A. N. Yablonsky; V. A. Yukhymchuk

doi:10.1117/12.513596

11 June 2003 Room-temperature photoluminescence of GeSi/Si(001) self-assembled islands in a 1.3-1.7 μm wavelength range

Yu. N. Drozdov, Z. F. Krasil'nik, D. N. Lobanov, A. V. Novikov, Mikhail Ya. Valakh, N. V. Vostokov, A. N. Yablonsky, V. A. Yukhymchuk

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Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.513596
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

The dependence of photoluminescence spectra of SiGe/Si(001) structures with self-assembled islands on Ge deposition temperature was investigated. Due to inhibition of SiGe alloying and an increase of the Ge content in islands the photoluminescence peak from the islands significantly shifted to low energy with a lowering temperature. The maximum of the peak from the island grown at 600°C was observed at energies less than the energy of the bandgap for bulk Ge. As a result of holes localization in islands the photoluminescence peak from the islands was observed up to room temperature. Sufficient enhancement of the room-temperature intensity of the photoluminescence signal at 1.55 μm was obtained for structures with islands grown on pre-deposited Si_1-xGe_x layer. It is associated with a more effective capturing of holes by densely packed islands in structures with a pre-deposited Si_1-xGe_x layer.

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Yu. N. Drozdov, Z. F. Krasil'nik, D. N. Lobanov, A. V. Novikov, Mikhail Ya. Valakh, N. V. Vostokov, A. N. Yablonsky, and V. A. Yukhymchuk "Room-temperature photoluminescence of GeSi/Si(001) self-assembled islands in a 1.3-1.7 μm wavelength range", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.513596

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KEYWORDS

Germanium

Silicon

Luminescence

Atomic force microscopy

Raman spectroscopy

Sensors

X-rays

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