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25 July 2003 High-speed tunnel injection InGaAs/GaAs quantum dot lasers
Pallab Bhattacharya, S. Ghosh
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Proceedings Volume 4986, Physics and Simulation of Optoelectronic Devices XI; (2003) https://doi.org/10.1117/12.482327
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
The design, growth, and steady-state and small-signal modulation characteristics of high-speed tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers are described and discussed. The measured small-signal modulation bandwidth for I/Ith ~ 3.2 is f-3dB = 22GHz and the gain compression factor for this frequency response is ε = 7.2s10-16 cm3. The differential gain obtained from the modulation data is dg/dn ≈ 8.85x10-14 cm2 at room temperature. The value of the K-factor is 0.171ns and the maximum intrinsic modulation bandwidth is 55GHz. The measured high speed data are comparable to, or better than, equivalent quantum well lasers for the first time.
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Pallab Bhattacharya and S. Ghosh "High-speed tunnel injection InGaAs/GaAs quantum dot lasers", Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); https://doi.org/10.1117/12.482327
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KEYWORDS
Modulation
Quantum dot lasers
Temperature metrology
Quantum wells
Quantum dots
Electrons
Heterojunctions
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