Challenging the limit of single mask exposure

Kenji Yamazoe; Masanobu Hasegawa; Kenji Saitoh; Akiyoshi Suzuki

doi:10.1117/12.474549

30 July 2002 Challenging the limit of single mask exposure

Kenji Yamazoe, Masanobu Hasegawa, Kenji Saitoh, Akiyoshi Suzuki

Proceedings Volume 4691, Optical Microlithography XV; (2002) https://doi.org/10.1117/12.474549
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

IDEALSmile is introduced as a new exposure technique. Since we have realized k₁ equals 0.29, k₁ equals 0.32 optical lithography is now achievable. In this paper IDEALSmile is targeted for contact hole patterns. The results validate that it is possible to simultaneously fabricate 110 nm (k₁ 0.32) half-pitch dense and isolated contact hole patterns using Canon FPA-5000ES3 (KrF, NA equals 0.73). Furthermore, our experimental results also show that it is possible to fabricate different half-pitch patterns at the same exposure dose, which is impossible by conventional methods. Since these results are obtained using binary mask and the modified illumination with single exposure, there are no concerns with regards to decrease in throughput and increase in cost of ownership. By attaining k₁ equals 0.32 for contact hole patterns using binary mask with single exposure, printing 100 nm contact hole patterns can be achieved with single exposure using KrF lithography, such as the Canon FPA-5000ES4 (KrF, NA equals 0.80) scanner which will soon make its market debut. ArF or F2 lithography is effective as for contact hole patterns below the 100 nm node. There is no doubt that optical microlithography will continue for some time.

Citation Download Citation

Kenji Yamazoe, Masanobu Hasegawa, Kenji Saitoh, and Akiyoshi Suzuki "Challenging the limit of single mask exposure", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474549

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