Epitaxial growth of the semiconducting silicide FeSi2 on silicon

Joel Simon Roge Chevrier; V. Le Thanh; J. Derrien

doi:10.1117/12.47171

1 September 1991 Epitaxial growth of the semiconducting silicide FeSi2 on silicon

Joel Simon Roge Chevrier, V. Le Thanh, J. Derrien

Proceedings Volume 1512, Infrared and Optoelectronic Materials and Devices; (1991) https://doi.org/10.1117/12.47171
Event: ECO4 (The Hague '91), 1991, The Hague, Netherlands

Abstract

One of the areas of current interest in basic semiconductor research in Si-integrated optoelectronic devices. Among the several existing routes investigated to realize this aim, the use of semiconducting silicides is of high interest since such a technology would put silicon at the roots of both microelectronics and optoelectronics. Only a few silicides are believed to display semiconducting properties. FeSi2 with a direct gap of 0.89 eV appears as one of the most promising materials since epitaxy on silicon substrates (111) and (100) has been reported. In order to give some new insights on this epitaxial growth, which is a key point for any further development, the authors present results on the preparation of epitaxial FeSi2 thin films grown in a molecular beam epitaxy machine on (111) silicon wafers. By means of in situ real-time reflection high energy electron diffraction, the formation of various silicide phases has been observed during the solid phase epitaxy process.

Citation Download Citation

Joel Simon Roge Chevrier, V. Le Thanh, and J. Derrien "Epitaxial growth of the semiconducting silicide FeSi2 on silicon", Proc. SPIE 1512, Infrared and Optoelectronic Materials and Devices, (1 September 1991); https://doi.org/10.1117/12.47171

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