Influence of a TiN interlayer on the microstructure and mechanical properties of hydroxyapatite films grown by pulsed laser deposition

Valentin D. Nelea; Carmen Ristoscu; Silviu Colis; Simona Arens; Herve Pelletier; Ion N. Mihailescu; Pierre Mille

doi:10.1117/12.425156

9 April 2001 Influence of a TiN interlayer on the microstructure and mechanical properties of hydroxyapatite films grown by pulsed laser deposition

Valentin D. Nelea, Carmen Ristoscu, Silviu Colis, Simona Arens, Herve Pelletier, Ion N. Mihailescu, Pierre Mille

Author Affiliations +

Proceedings Volume 4397, 11th International School on Quantum Electronics: Laser Physics and Applications; (2001) https://doi.org/10.1117/12.425156
Event: 11th International School on Quantum Electronics: Laser Physics and Applications, 2000, Varna, Bulgaria

Abstract

Crystalline hydroxyapatite (HA) thin films grown on metallic substrates is the best choice for bone restoration. This is due to the good biological compatibility of the hydroxyapatite material combined with the good mechanical characteristics of the substrates. We deposit HA thin films by Pulsed Laser Deposition (PLD) in vacuum at room temperature using a KrF* excimer laser ((lambda) equals 248 nm, (tau) _FWHM >= 20 ns). The depositions were performed directly on Ti-5Al-2.5Fe or on substrates previously coated with a TiN buffer layer. The HA deposited structures were characterized by complementary techniques: GIXRD, SEM, TEM, SAED, EDS and nanoindentation. Properties of the HA films grown with and without the TiN buffer were discussed in term of microstructure and mechanical behavior. The films with interlayer preserve the stoichiometry, are completely recrystallized and present better mechanical characteristics as compared with those without buffer.

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Valentin D. Nelea, Carmen Ristoscu, Silviu Colis, Simona Arens, Herve Pelletier, Ion N. Mihailescu, and Pierre Mille "Influence of a TiN interlayer on the microstructure and mechanical properties of hydroxyapatite films grown by pulsed laser deposition", Proc. SPIE 4397, 11th International School on Quantum Electronics: Laser Physics and Applications, (9 April 2001); https://doi.org/10.1117/12.425156

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