Chemical cutting process in narrow-gap semiconductors

Myhailo Y. Kravetsky; Oleksandr V. Fomin

doi:10.1117/12.417802

22 February 2001 Chemical cutting process in narrow-gap semiconductors

Myhailo Y. Kravetsky, Oleksandr V. Fomin

Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417802
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine

Abstract

For a case of chemical reactions of the first order the mathematical model of process of chemical cutting of crystals is advanced. It is showed, that the return speed of chemical cutting is equal to the sum of return speeds of such values, as velocity of a chemical reaction, velocity of delivery etchant and speed of diffusion of molecules of a reactant. At research of process of chemical cutting of crystals InSb the satisfactory coordination between experimental and theoretical results is obtained. The developed model can be used at designing of the equipment and for optimization of process of chemical cut.

Citation Download Citation

Myhailo Y. Kravetsky and Oleksandr V. Fomin "Chemical cutting process in narrow-gap semiconductors", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); https://doi.org/10.1117/12.417802

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