Importance of oxide capping on the suppression of dopant outdiffusion for salicide block process

Hong Liao; Soh Yun Siah; David Vigar

doi:10.1117/12.405379

24 October 2000 Importance of oxide capping on the suppression of dopant outdiffusion for salicide block process

Hong Liao, Soh Yun Siah, David Vigar

Proceedings Volume 4227, Advanced Microelectronic Processing Techniques; (2000) https://doi.org/10.1117/12.405379
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore

Abstract

In this paper, the effect of dopant out diffusion on unsalicided polysilicon resistance has been intensively investigated. It has been found that excessive dopant out diffusion as a result of non-optimized oxide capping could cause a large variation in sheet resistance of the unsalicided polysilicon resistor. For this salicide block process, great attention needs to be paid for the suppression of dopant out diffusion. Based on understanding of the cause of the inconsistent, unsalicided polysilicon resistance, we demonstrate an implementation of salicide blocking for 0.25 micrometers CMOS technology with a well controlled unsalicided polysilicon resistance by exploring the various process trade-offs in the choice of oxide for the salicide blocking and optimizing the subsequent thermal annealing process.

Citation Download Citation

Hong Liao, Soh Yun Siah, and David Vigar "Importance of oxide capping on the suppression of dopant outdiffusion for salicide block process", Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); https://doi.org/10.1117/12.405379

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