LEO of III-nitride on Al2O3 and Si substrates

Manijeh Razeghi; Patrick Kung; Peter M. Sandvik; Kan Mi; Xiaolong Zhang; Vinayak P. Dravid; Jaime A. Freitas Jr.; Adam W. Saxler

doi:10.1117/12.382133

13 April 2000 LEO of III-nitride on Al₂O₃ and Si substrates

Manijeh Razeghi, Patrick Kung, Peter M. Sandvik, Kan Mi, Xiaolong Zhang, Vinayak P. Dravid, Jaime A. Freitas Jr., Adam W. Saxler

Author Affiliations +

Proceedings Volume 3948, Photodetectors: Materials and Devices V; (2000) https://doi.org/10.1117/12.382133
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

Lateral epitaxial overgrowth (LEO) has recently become the method of choice to reduce the density of dislocations in heteroepitaxial GaN thin films, and is thus expected to lead to enhanced performance devices. We present here the LEO growth and characterization of GaN films by low pressure metalorganic chemical vapor deposition. Various substrates were used, including basal plane sapphire and oriented Si substrates. The steps in the LEO growth technology will be briefly reviewed. The characterization results will be discussed in detail. The structural, electrical and optical properties of the films were assessed through scanning, atomic and transmission electron microscopy, x-ray diffraction, capacitance-voltage, deep level transient spectroscopy, photoluminescence, and scanning cathodoluminenscence measurements. Single-step and double- step LEO GaN was achieved on sapphire. Similarly high quality LEO grown GaN films were obtained on sapphire and silicon substrates. Clear and dramatic reduction in the density of defects are observed in LEO grown materials using the various characterization techniques mentioned previously.

Citation Download Citation

Manijeh Razeghi, Patrick Kung, Peter M. Sandvik, Kan Mi, Xiaolong Zhang, Vinayak P. Dravid, Jaime A. Freitas Jr., and Adam W. Saxler "LEO of III-nitride on Al₂O₃ and Si substrates", Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); https://doi.org/10.1117/12.382133

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