Process effects resulting from an increased BARC thickness

Ronald J. Eakin; Shangting F. Detweiler; Gregory J. Stagaman; Mark R Tesauro; Mark A. Spak; Ralph R. Dammel

doi:10.1117/12.275841

7 July 1997 Process effects resulting from an increased BARC thickness

Ronald J. Eakin, Shangting F. Detweiler, Gregory J. Stagaman, Mark R Tesauro, Mark A. Spak, Ralph R. Dammel

Proceedings Volume 3049, Advances in Resist Technology and Processing XIV; (1997) https://doi.org/10.1117/12.275841
Event: Microlithography '97, 1997, Santa Clara, CA, United States

Abstract

Process improvements attributed to the use of bottom anti- reflective coatings (B.A.R.C.s) are well documented. As our experience with these materials improves, so does our understanding of additional optimization. Recent supplier experiments suggest an increase in the thickness of AZ^R BARLi^TM (bottom anti-reflective layer i-line) solution to reduce photoresist swing curve ratios. Also, changes in thin film stack on common substrates can adversely affect the degree of photoresist reflective notching. It is therefore of extreme importance to determine optimum thickness(es) of a B.A.R.C. material to ensure maximum process potential. We document several process effects in the conversion of a SRAM test device (0.38 - 0.45 micrometers) from a 650 angstrom to a 2000 angstrom BARLi^TM film thickness using conventional i-line photolithography. Critical dimension (CD) uniformity and depth of focus (DOF) are evaluated. Defect density between the two processes are compared before and after etch employing optical metrology and electrical test structures. Sensitivity of overlay as a function of BARLi^TM film thickness is investigated as well.

Citation Download Citation

Ronald J. Eakin, Shangting F. Detweiler, Gregory J. Stagaman, Mark R Tesauro, Mark A. Spak, and Ralph R. Dammel "Process effects resulting from an increased BARC thickness", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); https://doi.org/10.1117/12.275841

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