Investigating self-assembled strain-free growth of In droplets on GaN using droplet epitaxy

Malak Refaei; Rohith Allaparthi; Mirsaeid Sarollahi; Morgan E. Ware

doi:10.1117/12.2647631

15 March 2023 Investigating self-assembled strain-free growth of In droplets on GaN using droplet epitaxy

Malak Refaei, Rohith Allaparthi, Mirsaeid Sarollahi, Morgan E. Ware

Proceedings Volume 12421, Gallium Nitride Materials and Devices XVIII; 124210P (2023) https://doi.org/10.1117/12.2647631
Event: SPIE OPTO, 2023, San Francisco, California, United States

Conference Poster

Abstract

Self-assembled strain-free growth of In droplets on GaN via droplet epitaxy (DE) technique was investigated. Controlling In droplet size and density as a function of substrate temperature is described. The highest density of 1.36 × 108 cm^-2 was observed at a very low substrate temperature of 30 °C. The resulting droplets are crystalline at room temperature and are characterized ex-situ by atomic force microscopy (AFM) and x-ray diffraction (XRD). The formation of quantum dots (QDs) through crystallization of In droplets grown using the DE method has many advantages over the strain driven Stranski-Krastinow technique, including the ability to control a wide range of QD shapes, sizes, and densities, as well as overcoming the limitations of lattice mismatched with substrates. This study explains the first stage of forming a controlled InN QD on GaN.

Citation Download Citation

Malak Refaei, Rohith Allaparthi, Mirsaeid Sarollahi, and Morgan E. Ware "Investigating self-assembled strain-free growth of In droplets on GaN using droplet epitaxy", Proc. SPIE 12421, Gallium Nitride Materials and Devices XVIII, 124210P (15 March 2023); https://doi.org/10.1117/12.2647631

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