Analytical techniques for mechanistic characterization of EUV photoresists

Steven Grzeskowiak; Amrit Narasimhan; Michael Murphy; Christian Ackerman; Jake Kaminsky; Robert L. Brainard; Greg Denbeaux

doi:10.1117/12.2274128

27 March 2017 Analytical techniques for mechanistic characterization of EUV photoresists

Steven Grzeskowiak, Amrit Narasimhan, Michael Murphy, Christian Ackerman, Jake Kaminsky, Robert L. Brainard, Greg Denbeaux

Author Affiliations +

Proceedings Volume 10146, Advances in Patterning Materials and Processes XXXIV; 101462C (2017) https://doi.org/10.1117/12.2274128
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

Extreme ultraviolet (EUV, ~13.5 nm) lithography is the prospective technology for high volume manufacturing by the microelectronics industry. Significant strides towards achieving adequate EUV source power and availability have been made recently, but a limited rate of improvement in photoresist performance still delays the implementation of EUV. Many fundamental questions remain to be answered about the exposure mechanisms of even the relatively well understood chemically amplified EUV photoresists. Moreover, several groups around the world are developing revolutionary metal-based resists whose EUV exposure mechanisms are even less understood. Here, we describe several evaluation techniques to help elucidate mechanistic details of EUV exposure mechanisms of chemically amplified and metal-based resists. EUV absorption coefficients are determined experimentally by measuring the transmission through a resist coated on a silicon nitride membrane. Photochemistry can be evaluated by monitoring small outgassing reaction products to provide insight into photoacid generator or metal-based resist reactivity. Spectroscopic techniques such as thin-film Fourier transform infrared (FTIR) spectroscopy can measure the chemical state of a photoresist system pre- and post-EUV exposure. Additionally, electrolysis can be used to study the interaction between photoresist components and low energy electrons. Collectively, these techniques improve our current understanding of photomechanisms for several EUV photoresist systems, which is needed to develop new, better performing materials needed for high volume manufacturing.

Citation Download Citation

Steven Grzeskowiak, Amrit Narasimhan, Michael Murphy, Christian Ackerman, Jake Kaminsky, Robert L. Brainard, and Greg Denbeaux "Analytical techniques for mechanistic characterization of EUV photoresists", Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 101462C (27 March 2017); https://doi.org/10.1117/12.2274128

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available