Ultrashort pulse laser slicing of semiconductor crystal

Eunho Kim; Yasuhiko Shimotsuma; Masaaki Sakakura; Kiyotaka Miura

doi:10.1117/12.2235146

22 July 2016 Ultrashort pulse laser slicing of semiconductor crystal

Eunho Kim, Yasuhiko Shimotsuma, Masaaki Sakakura, Kiyotaka Miura

Proceedings Volume 9983, Pacific Rim Laser Damage 2016: Optical Materials for High-Power Lasers; 99831B (2016) https://doi.org/10.1117/12.2235146
Event: Pacific Rim Laser Damage 2016: Optical Materials for High Power Lasers, 2016, Yokohama, Japan

Abstract

Meanwhile, by the convention wire-saw technique, it is difficult to slice off a thin wafer from bulk SiC crystal without the reserving space for cutting. In this study, we have achieved exfoliation of 4H-SiC single crystal by femtosecond laser induced slicing method. By using this, the exfoliated surface with the root-mean-square roughness of 3 μm and the cutting-loss thickness smaller than 30 μm was successfully demonstrated. We have also observed the nanostructure on the exfoliated surface in SiC crystal.

Citation Download Citation

Eunho Kim, Yasuhiko Shimotsuma, Masaaki Sakakura, and Kiyotaka Miura "Ultrashort pulse laser slicing of semiconductor crystal", Proc. SPIE 9983, Pacific Rim Laser Damage 2016: Optical Materials for High-Power Lasers, 99831B (22 July 2016); https://doi.org/10.1117/12.2235146

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