Paper
1 June 1990 New KrF excimer laser process for improving novolac-type photoresist resolution
Akitoshi Kumagae, Kazuo Sato, Shinichi Ito, Takayuki Minamiyama, Makoto Nakase
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Abstract
Surface modification of novolac type photoresist was investigated by alkali treatment in KrF excimer laser lithography. It was clarified from FTIR, ESCA, and UV spectrum analysis that the formation of an insoluble layer on the resist surface is due to the existence of a concentrated layer of a photoactive compound. This insoluble layer improved the top profile of the resist pattern and suppressed film thickness loss, but was not effective for controlling the linewidth in the succeeding reactive ion etching process. The wall angle of the resist profile was found to be the most important factor for decreasing the linewidth shift through reactive ion etching. Lateral modification of the resist side wall was conceived to improve the wall angle from the result of analyzing surface modification. As a result, vertical profiles of sub-halfmicron patterns were obtained successfully, which was realized by a combination of alkali treatment before exposure and multi-step development.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Akitoshi Kumagae, Kazuo Sato, Shinichi Ito, Takayuki Minamiyama, and Makoto Nakase "New KrF excimer laser process for improving novolac-type photoresist resolution", Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); https://doi.org/10.1117/12.20139
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KEYWORDS
Photoresist processing

Photoresist materials

Laser processing

Excimer lasers

Reactive ion etching

Absorbance

FT-IR spectroscopy

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