Modification of oxygen-doped polysilicon using ion implantation

Yun Zhen Wang; Jian Hu; Zongsheng Lai; Dezhang Zhu; Jianqin Cao; Jinlong Xu

doi:10.1117/12.190742

26 October 1994 Modification of oxygen-doped polysilicon using ion implantation

Yun Zhen Wang, Jian Hu, Zongsheng Lai, Dezhang Zhu, Jianqin Cao, Jinlong Xu

Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190742
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China

Abstract

The present paper reports on the sheet resistance of Semi-Insulating Oxygen-Doped Polysilicon (SIPOS) using ion implantation. The type of dopant implanted, implant dose and annealing temperature are influence the sheet resistance of implanted SIPOS film. In addition, the behaviors of oxygen and hydrogen in implanted SIPOS film have been described, so that may be form the conduction model. We used three samples with different oxygen content implanted by Boron (B), Phosphorus (P) and Arsenic (As) various ions and measured the sheet resistance of those samples. As it is well known, the electrical properties and microstructures of SIPOS films are very sensitive to the oxygen content, so we measure the changes of oxygen content and hydrogen content after implantation, and then the conduction of implanted SIPOS film have been analyzed in this paper.

Citation Download Citation

Yun Zhen Wang, Jian Hu, Zongsheng Lai, Dezhang Zhu, Jianqin Cao, and Jinlong Xu "Modification of oxygen-doped polysilicon using ion implantation", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190742

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