Influence of band-gap localized states on metal-amorphous hydrogenated silicon contact parameters

Nick V. Vishnyakov; Sergey Pavlovich Vikhrov; Valerie A. Ligachov

doi:10.1117/12.131005

1 August 1992 Influence of band-gap localized states on metal-amorphous hydrogenated silicon contact parameters

Nick V. Vishnyakov, Sergey Pavlovich Vikhrov, Valerie A. Ligachov

Proceedings Volume 1783, International Conference of Microelectronics: Microelectronics '92; (1992) https://doi.org/10.1117/12.131005
Event: International Conference on Microelectronics, 1992, Warsaw, Poland

Abstract

Amorphous hydrogenated silicon (a-Si:H) is a very interesting and perspective semiconductor applied in solar cells, optical image sources, memory cells, etc. But the problem of metal- amorphous hydrogenated silicon contact is not solved at present. It has been noted that application of the crystalline barrier theory is not correct in this case. This is connected with the high density of states in the midgap, which is not observed in crystalline silicon. Evidently the high density of states influences to a large extent the metal/a-Si:H barrier parameters and its formation mechanism. In this paper, some theoretical calculations of voltaic dependence of the barrier low-frequency capacitance are presented with the results of barrier height measurement.

Citation Download Citation

Nick V. Vishnyakov, Sergey Pavlovich Vikhrov, and Valerie A. Ligachov "Influence of band-gap localized states on metal-amorphous hydrogenated silicon contact parameters", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); https://doi.org/10.1117/12.131005

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