To improve the carrier injection efficiency and optimize the performance of the AlGaN-based deep ultraviolet laser diodes (DUV-LDs), one-way step-shaped quantum barriers (OWS-QBs), a symmetrical step-shaped electron blocking layer (SS-EBL), and a symmetrical step-shaped hole blocking layer (SS-HBL) are proposed. Crosslight software is used to simulate the DUV-LDs with a traditional structure, with OWS-QBs, and with OWS-QBs, a SS-EBL, and a SS-HBL. The simulation results and physical mechanism analysis indicate that the SS-EBL, SS-HBL, and OWS-QBs contribute to the increased carrier concentration in the quantum wells, the reduced carrier leakage in the nonactive regions, the increased stimulated emission rate, the reduced threshold current and threshold voltage, and the enhanced output power and electro-optical conversion efficiency of DUV-LDs.