ZEP‐520 and KRS resist systems have been evaluated as candidates for use in low voltage electron beam lithography. ZEP‐520 is a conventional chain scission resist which has a positive tone for over two orders of magnitude in exposure dose. KRS is a chemically amplified resist which can be easily tone reversed with a sensitivity ∼8 μC/cm2 at 1 keV. Both resist systems are shown to have sensitivities ∼1 μC/cm2 for positive tone area exposures to 1 keV electrons. A decrease in contrast in 50 nm thick resist layers is seen when exposure voltage is lowered from 2 to 1 keV, indicating nonuniform energy deposition over the resist thickness. High resolution single pass lines have been transferred into both Si and SiO2 substrates at both low and high voltages in each resist system without using multilayer resist masks. The ZEP‐520 and KRS resists are shown to have resolutions of 50 and 60 nm, respectively, at 1 kV, within a factor of 2 of their high voltage resolutions under identical development conditions. A cusp shaped etch profile in Si allows high aspect ratio 20 nm wide trenches to be fabricated using these resists on bulk Si. Low voltage exposures have been used to pattern gratings with periods as small as 75 and 100 nm in ZEP‐520 and KRS, respectively. Low voltage exposures on SiO2 show no indications of pattern distortion due to charging or proximity effects.
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November 1996
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
The 40th international conference on electron, ion, and photon beam technology and nanofabrication
28−31 May 1996
Atlanta, Georgia (USA)
Research Article|
November 01 1996
High resolution electron beam lithography using ZEP‐520 and KRS resists at low voltage
D. M. Tanenbaum;
D. M. Tanenbaum
School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853
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C. W. Lo;
C. W. Lo
School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853
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M. Isaacson;
M. Isaacson
School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853
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H. G. Craighead;
H. G. Craighead
School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853
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M. J. Rooks;
M. J. Rooks
Cornell Nanofabrication Facility, Cornell University, Ithaca, New York 14853
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K. Y. Lee;
K. Y. Lee
SRDC, IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
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W. S. Huang;
W. S. Huang
SRDC, IBM E. Fishkill Facility, Hopewell Junction, New York 12533
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T. H. P. Chang
T. H. P. Chang
SRDC, IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
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J. Vac. Sci. Technol. B 14, 3829–3833 (1996)
Article history
Received:
May 28 1996
Accepted:
August 16 1996
Citation
D. M. Tanenbaum, C. W. Lo, M. Isaacson, H. G. Craighead, M. J. Rooks, K. Y. Lee, W. S. Huang, T. H. P. Chang; High resolution electron beam lithography using ZEP‐520 and KRS resists at low voltage. J. Vac. Sci. Technol. B 1 November 1996; 14 (6): 3829–3833. https://doi.org/10.1116/1.588676
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