films were grown on Si(100) by chemical vapor deposition as an attempt to develop an industrially straightforward gate dielectric deposition process. During deposition at the decomposition of the hafnium-tetra-tert-butoxide precursor provides sufficient oxygen to produce a stoichiometric film. Medium energy ion scattering, high resolution transmission electron microscopy, atomic force microscopy, and ellipsometry were used to identify the structure and composition of the film and its interface to the Si substrate. Local crystallinity in the films increased significantly with annealing. Capacitance–voltage and current–voltage methods were used to characterize the electrical properties of simple capacitor structures. When grown on high quality ultrathin oxides or oxynitrides, the deposited films displayed very good physical and electrical properties.
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March 2002
Research Article|
March 01 2002
Chemical vapor deposition of films on Si(100)
S. Sayan;
S. Sayan
Department of Chemistry, Rutgers University, Piscataway, New Jersey 08854
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S. Aravamudhan;
S. Aravamudhan
Department of Chemistry, Rutgers University, Piscataway, New Jersey 08854
Agere Systems, Electronic Device Research Laboratory, Murray Hill, New Jersey 07974
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B. W. Busch;
B. W. Busch
Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854
Agere Systems, Electronic Device Research Laboratory, Murray Hill, New Jersey 07974
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W. H. Schulte;
W. H. Schulte
Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854
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F. Cosandey;
F. Cosandey
Department of Ceramics and Materials Engineering, Rutgers University, Piscataway, New Jersey 08854
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G. D. Wilk;
G. D. Wilk
Agere Systems, Electronic Device Research Laboratory, Murray Hill, New Jersey 07974
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T. Gustafsson;
T. Gustafsson
Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854
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E. Garfunkel
E. Garfunkel
Department of Chemistry, Rutgers University, Piscataway, New Jersey 08854
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J. Vac. Sci. Technol. A 20, 507–512 (2002)
Article history
Received:
September 19 2001
Accepted:
December 17 2001
Citation
S. Sayan, S. Aravamudhan, B. W. Busch, W. H. Schulte, F. Cosandey, G. D. Wilk, T. Gustafsson, E. Garfunkel; Chemical vapor deposition of films on Si(100). J. Vac. Sci. Technol. A 1 March 2002; 20 (2): 507–512. https://doi.org/10.1116/1.1450584
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