|
1. |
An Ultra-Wide-Band 0.4–10-GHz LNA in 0.18-μm CMOS
Ke-Hou Chen; Jian-Hao Lu; Bo-Jiun Chen; Shen-Iuan Liu;
Circuits and Systems II: Express Briefs, IEEE Transactions on
Volume 54,
Issue 3,
March 2007
Page(s):217
-
221
Abstract:
A two-stage ultra-wide-band CMOS low-noise amplifier (LNA) is presented. With the common-gate configuration employed as the input stage, the broad-band input matching is obtained and the noise does not rise rapidly at higher frequency. By combining the common-gate and common-source stages, the broad-band characteristic and small area are achieved by using two inductors. This LNA has been fabricated in a 0.18-mum CMOS process. The measured power gain is 11.2-12.4 dB and noise figure is 4.4-6.5 dB with -3-dB bandwidth of 0.4-10 GHz. The measured IIP3 is -6 dBm at 6 GHz. It consumes 12 mW from a 1.8-V supply voltage and occupies only 0.42 mm2
|
Cart
