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Dynamic sleep transistor and body bias for active leakage power control of microprocessors
Tschanz, J.W.; Narendra, S.G.; Ye, Y.; Bloechel, B.A.; Borkar, S.; De, V.;
Solid-State Circuits, IEEE Journal of
Volume 38,
Issue 11,
Nov. 2003
Page(s):1838
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1845
Abstract:
In order to manage the active power consumption of high-performance digital designs, active leakage control techniques are required to provide significant leakage power savings coupled with fast time constants for entering and exiting idle mode. In this paper, dynamic sleep transistors and body bias are used in conjunction with clock gating to control active leakage for a 32-bit integer execution core in 130-nm CMOS technology. Measurements on pMOS sleep transistor reveal that lowest-leakage state is reached in less than 1 /spl mu/s, resulting in 37/spl times/ reduction in leakage power, while reactivation of block is achieved in less than two clock cycles. PMOS body bias reduces leakage power by 2/spl times/ with no performance penalty, and similar reactivation time. Power measurements at 4 GHz, 1.3 V, 75/spl deg/C demonstrate 8% total power reduction using dynamic body bias and 15% power reduction using a pMOS sleep transistor, for a typical activity profile.
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