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Carrier lifetime extraction in fully depleted dual-gate SOI devices
Ernst, T.; Vandooren, A.; Cristoloveanu, S.; Colinge, J.-P.; Flandre, D.;
Electron Device Letters, IEEE
Volume 20,
Issue 5,
May 1999
Page(s):209
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211
Abstract:
A new method for extracting the carrier recombination lifetime in dual-gate silicon-on-insulator (SOI) structures is proposed. The experiment, model, and numerical simulations indicate that an excess forward current is obtained when carrier recombination occurs in the whole film volume
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