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A physically-based C∞-continuous model for accumulation-mode SOI pMOSFETs
Iniguez, B.; Dessard, V.; Flandre, D.; Gentinne, B.;
Electron Devices, IEEE Transactions on
Volume 46,
Issue 12,
Dec. 1999
Page(s):2295
-
2303
Abstract:
In this paper, we present a unified accumulation-mode (AM) SOI MOSFET model for circuit simulation. The model is valid in all the regimes of normal operation and includes explicit expressions of the drain current and total charges which have an infinite order of continuity; therefore, smooth transitions are assured. Short-channel effects have also been accounted for. We have finally proved that our model accurately fits the transistor characteristics for effective channel lengths down to 0.7-μm
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