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A high-voltage modulator for high-power RF source research
Mulligan, W.J.; Chen, S.C.; Bekefi, G.; Danly, B.G.; Temkin, R.J.;
Electron Devices, IEEE Transactions on
Volume 38,
Issue 4,
April 1991
Page(s):817
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821
Abstract:
The design, construction, and operating results of a high-voltage modulator system capable of generating 700-kV, 2.5-μs pulses at 5 p.p.s. into a load of 900 Ω are presented. The modular is used to energize a variety of high power microwave devices requiring voltage stability and reproducibility. Voltage ripple is less than 0.2% during the 1.0-μs flat top, with a shot-to-shot voltage variation of less than 0.1%. The primary circuit consists of two seven-stage tunable Rayleigh-type pulse-forming networks (PFNs) connected in parallel with a total impedance of 2.25 Ω, a total capacitance of 0.56 μF, and a total inductance of 2.8 μH. The PFN is charged by a highly stable 80-kV capacitor charging power supply (0.1% RMS voltage ripple) at a rate of 10 KJ/s. The total energy stored (1.5 kJ) is released through an ITT F-187 thyratron into a 20:1 pulse transformer, which generates 700-kV, 2.5-μs pulses. By changing the transformer, it was possible to obtain 250-kV, 1.70-kA pulses for driving low-impedance relativistic magnetron diodes. The flat-top voltage generated by the modulator is highly desirable for driving RF sources requiring high-quality electron beams, such as free-electron lasers (FELs) and cyclotron autoresonance masers (CARMs). The modulator performance in the relativistic magnetron and CARM experiments is described
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