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The origins of the performance degradation of implanted p+ polysilicon gated p-channel MOSFET with/without rapid thermal annealing
Hsieh, J.C.; Fang, Y.K.; Chen, C.W.; Tsai, N.S.; Lin, M.S.; Tseng, F.C.;
Electron Devices, IEEE Transactions on
Volume 41,
Issue 5,
May 1994
Page(s):692
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697
Abstract:
Some anomalous behaviors, such as punchthrough voltage reduction, leakage current increase, and transconductance (gm) instability have been found in BF2 implanted p+-polysilicon P-MOSFET's. These effects are supposed to be due to B-ion penetration. To prevent the B-ion penetration, RTA has been used. Experimental results show that RTA can improve the effect, however, the RTA process can also cause the generation of interface states, gate-induced-drain-leakage increase, and oxide quality degradation. All of the mechanisms of performance degradation are investigated and modeled in detail
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