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Transient effects in accumulation mode p-channel SOI MOSFET's operating at 77 K
Martino, J.A.; Rotondaro, A.L.P.; Simoen, E.; Magnusson, U.; Claeys, C.;
Electron Devices, IEEE Transactions on
Volume 41,
Issue 4,
April 1994
Page(s):519
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523
Abstract:
This paper critically examines the conduction mechanisms in accumulation mode p-channel SOI MOSFET's operating at cryogenic temperatures. In particular, attention is given to the body current component, which in most cases is experimentally not observed at 77 K or 4.2 K. As will be demonstrated, both the body current and the back accumulation current show pronounced transient effects at low temperatures, which are related to the slow generation/recombination of minority carriers. This is caused by deep depletion from the front interface, which suppresses these current components. By the application of either a light pulse or a large drain voltage Vds minority carriers are generated nearly instantaneously in the body region, rendering the body and the back accumulation components clearly visible
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