Triple-crystal diffraction studies on ion-implanted and other silicon crystals using a synchrotron source

Triple-crystal diffraction studies are capable of cleanly separating the various experimental components of the scattering in the vicinity of a Brags peak. The two-dimensional intensity distributions obtained in such an experiment consist of various components which extend in distinct directions in (Δω_s, Δ2θ_S) space, where Δω_s and Δ2θ_S are the offset angles of the sample and analyzer/detector from the Bragg condition. One-dimensional 'slice' scans can be used in studying specific details, given a known disposition of the components, be they dynamical, kinematical or aspects of the instrumental arrangement. In this paper triple-crystal diffraction results obtained for given ion-implanted and other Si crystals using both a conventional X-ray tube and a synchrotron source are presented and compared.