Figure 1

Miniband dispersion in [klm]-oriented $(\mathrm{GaAs}{)}_N\mathrm{\text{−}}({\mathrm{Al}}_{0.3}{\mathrm{Ga}}_{0.7}\mathrm{As}{)}_N$ superlattices, with layer thicknesses of 30 Å, calculated with a nearest-neighbor $s{p}^3{d}^5{s}^{*}$ tight-binding model. Energies are measured from the GaAs valence band maximum.Reuse & Permissions

Figure 2

Left panel: Real (solid line) and imaginary (dashed line) parts of the conduction-band eigenenergy as function of $\phi$ for $|k|=0.01$ ($2\pi /a$). Right panel: Complex band structure of GaAs along the $[110]$ direction: real bands (thick lines) and imaginary (thin dashed line) and real (thin solid line) components of the evanescent wave vector. For the sake of simplicity, only the loop connecting ${\Gamma }_{6c}$ and ${\Gamma }_{8v}^l$ is shown.Reuse & Permissions