Measurement of the Surface Strain Induced by Reconstructed Surfaces of GaAs (001) Using Photoreflectance and Reflectance-Difference Spectroscopies

L. F. Lastras-Martínez, J. M. Flores-Camacho, A. Lastras-Martínez, R. E. Balderas-Navarro, and M. Cardona
Phys. Rev. Lett. 96, 047402 – Published 2 February 2006

Abstract

We report photoreflectance-difference and reflectance-difference measurements on reconstructed GaAs (001) surfaces. From these data the linear and quadratic electro-optic coefficient spectra are determined in the important 2.8–3.4 eV spectral region. The surface strain and fields induced by the surface reconstruction are also determined. We show experimentally that between c(4×4) and (2×4) surfaces, there is an inversion of the surface electric field which we attribute to a direct piezo-electric effect related to the surface strain induced by reconstruction.

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  • Received 7 June 2005

DOI:https://doi.org/10.1103/PhysRevLett.96.047402

©2006 American Physical Society

Authors & Affiliations

L. F. Lastras-Martínez1,*, J. M. Flores-Camacho1, A. Lastras-Martínez1, R. E. Balderas-Navarro1,2, and M. Cardona3

  • 1Instituto de Investigación en Comunicación Optica, Universidad Autonóma de San Luis Potosí, Alvaro Obregón 64, San Luis Potosí, México
  • 2Facultad de Ciencias, Universidad Autonóma de San Luis Potosí, Alvaro Obregón 64, San Luis Potosí, México
  • 3Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany

  • *lflm@cactus.iico.uaslp.mx

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Vol. 96, Iss. 4 — 3 February 2006

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