Collapse of Thermal Activation in Moderately Damped Josephson Junctions

V. M. Krasnov, T. Bauch, S. Intiso, E. Hürfeld, T. Akazaki, H. Takayanagi, and P. Delsing
Phys. Rev. Lett. 95, 157002 – Published 6 October 2005

Abstract

We study switching current statistics in moderately damped Nb-InAs-Nb and intrinsic Bi2Sr2CaCu2O8+δ Josephson junctions. A paradoxical collapse of thermal activation with increasing temperature is reported and explained by the interplay of two conflicting consequences of thermal fluctuations, which can both assist in premature escape and help in retrapping back into the stationary state. We analyze the influence of dissipation on the thermal escape by tuning damping with a gate voltage, magnetic field, temperature, and an in situ capacitor.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 28 February 2005

DOI:https://doi.org/10.1103/PhysRevLett.95.157002

©2005 American Physical Society

Authors & Affiliations

V. M. Krasnov1, T. Bauch2, S. Intiso2, E. Hürfeld2, T. Akazaki3, H. Takayanagi3, and P. Delsing2

  • 1Department of Physics, Stockholm University, Albanova University Center, SE-10691 Stockholm, Sweden
  • 2Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden
  • 3NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi-Shi, Kanagawa 243-01, Japan

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 95, Iss. 15 — 7 October 2005

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×