Amorphouslike Density of Gap States in Single-Crystal Pentacene

D. V. Lang, X. Chi, T. Siegrist, A. M. Sergent, and A. P. Ramirez
Phys. Rev. Lett. 93, 086802 – Published 19 August 2004

Abstract

We show that optical and electrical measurements on pentacene single crystals can be used to extract the density of states in the highest occupied molecular orbital–lowest unoccupied molecular orbital band gap. It is found that these highly purified crystals possess band tails broader than those typically observed in inorganic amorphous solids. Results on field-effect transistors fabricated from similar crystals imply that the gap state density is much larger within 5–10 nm of the gate dielectric. Thus, organic thin-film transistors for such applications as flexible displays might be significantly improved by reducing these defects.

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  • Received 4 December 2003

DOI:https://doi.org/10.1103/PhysRevLett.93.086802

©2004 American Physical Society

Authors & Affiliations

D. V. Lang1,2, X. Chi2, T. Siegrist3, A. M. Sergent3, and A. P. Ramirez3,2

  • 1Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
  • 2Columbia University, New York, New York 10027, USA
  • 3Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974, USA

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Issue

Vol. 93, Iss. 8 — 20 August 2004

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