Properties of Liquid Silicon Observed by Time-Resolved X-Ray Absorption Spectroscopy

S. L. Johnson, P. A. Heimann, A. M. Lindenberg, H. O. Jeschke, M. E. Garcia, Z. Chang, R. W. Lee, J. J. Rehr, and R. W. Falcone

Phys. Rev. Lett. 91, 157403 – Published 9 October 2003

Abstract

Time-resolved x-ray spectroscopy at the Si $L$ edges is used to probe the electronic structure of an amorphous Si foil as it melts following absorption of an ultrafast laser pulse. Picosecond temporal resolution allows observation of the transient liquid phase before vaporization and before the liquid breaks up into droplets. The melting causes changes in the spectrum that match predictions of molecular dynamics and ab initio x-ray absorption codes.

Received 13 November 2002

DOI:https://doi.org/10.1103/PhysRevLett.91.157403

Authors & Affiliations

S. L. Johnson^1,*, P. A. Heimann², A. M. Lindenberg¹, H. O. Jeschke³, M. E. Garcia³, Z. Chang⁴, R. W. Lee⁵, J. J. Rehr⁶, and R. W. Falcone^1,7

¹Department of Physics, University of California, Berkeley, California 94720, USA
²Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
³Institut für Theoretische Physik, Freie Universität Berlin, Arnimallee 14, 14195 Berlin, Germany
⁴Department of Physics, Kansas State University, Manhattan, Kansas 66506, USA
⁵Lawrence Livermore National Laboratory, Livermore, California 94551, USA
⁶Department of Physics, University of Washington, Seattle, Washington 98195, USA
⁷Center for Beam Physics, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

^*Electronic address: Steve.Johnson@mailaps.org

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Vol. 91, Iss. 15 — 10 October 2003

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