Strong Energy Dependence of the Electron-Phonon Coupling Strength on Bi(100)

J. E. Gayone, S. V. Hoffmann, Z. Li, and Ph. Hofmann
Phys. Rev. Lett. 91, 127601 – Published 19 September 2003

Abstract

We have studied the energy dependence of the electron-phonon coupling strength on Bi(100). A fit of the temperature-dependent surface state linewidth results in a change of the coupling parameter λ from 0.20±0.02 to 0.72±0.05 as the binding energy of the surface state increases from 70 to 330 meV. This result cannot be reconciled with the usual interpretation of λ as the electron-phonon mass enhancement parameter at the Fermi energy. We suggest that this behavior is mainly caused by the strong energy dependence of the bulk density of states in this region.

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  • Received 23 April 2003

DOI:https://doi.org/10.1103/PhysRevLett.91.127601

©2003 American Physical Society

Authors & Affiliations

J. E. Gayone, S. V. Hoffmann, Z. Li, and Ph. Hofmann*

  • Institute for Storage Ring Facilities, University of Aarhus, DK-8000 Aarhus C, Denmark

  • *Electronic address: philip@phys.au.dk URL: http://www.phys.au.dk/~philip/

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Issue

Vol. 91, Iss. 12 — 19 September 2003

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