Figure 1

(a) Calculated transmittance of a $3.9\mu \mathrm{m}$-thick layer of AlAs embedded in GaAs at an angle of incidence of $60°$; the arrow indicates the energy of the chosen intersubband transition (143 meV). (b) Schematic view of the prism-shaped microresonator. The large arrows represent the optical path of light in the substrate. The right-end part shows the structure of the active core; thicknesses are given in nm.Reuse & Permissions

Figure 2

Reflectance of the microcavity sample for different angles of incidence in TM polarization. The spectra were collected at 10 K, with a resolution of $2{\mathrm{c}\mathrm{m}}^{-1}$. The angle values refer to $\theta$ at the substrate-cavity interface; dashed lines are just a guide to the eye. The spectra are offset from each other for clarity. The rapid oscillations in the high energy portion are due to residual water vapor absorption in the purged FTIR system. In the left inset the experimental points corresponding to the energy position of the dips are reported. The solid lines are fitted with a standard dipole oscillator dispersion. The right inset contains a spectrum recorded under TE polarization; only the dip of the cavity mode appears.Reuse & Permissions

Figure 3

TM reflectance of the sample as obtained at different incidence angles using the simulation procedure described in the text. The spectra are offset from each other for clarity. In the inset we report a comparison between the experimental and calculated spectrum at the resonance angle of $60.05°$.Reuse & Permissions

Figure 4

The structure TM reflectance as recorded at 300 K for different angles of incidence. The spectra show a polariton splitting of about 11 meV, smaller than at low temperature. The third dip appearing in the $58.57°$ curve is probably an artefact due to background subtraction. In the inset we plot the energy position of the dips as a function of angle; the dotted line is a fit with a Lorentzian oscillator dispersion.Reuse & Permissions