Layered Perovskites with Giant Spontaneous Polarizations for Nonvolatile Memories

Uong Chon, Hyun M. Jang, M. G. Kim, and C. H. Chang
Phys. Rev. Lett. 89, 087601 – Published 5 August 2002

Abstract

A series of titanate-based layered perovskites having large values of the spontaneous polarization Ps were developed for their applcations to nonvolatile ferroelectric random access memories. Among these, the Nd-modified bismuth titanate [Bi4xNdxTi3O12 (BNdT)] system exhibited the most remarkable ferroelectric properties. The c-axis oriented BNdT capacitor was characterized by a switchable remanent polarization 2Pr of over 100   μC/cm2 and imprinting and fatigue-free behavior. The active Ti site responsible for the giant Ps was identified with the help of Rietveld analysis, x-ray absorption near-edge structure study, and ab initio quantum computations.

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  • Received 11 December 2001

DOI:https://doi.org/10.1103/PhysRevLett.89.087601

©2002 American Physical Society

Authors & Affiliations

Uong Chon1,2, Hyun M. Jang1,*, M. G. Kim3, and C. H. Chang2

  • 1Department of Materials Science and Engineering, and National Research Laboratory for Ferroelectric Phase Transitions, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea
  • 2Research Institute of Industrial Science and Technology (RIST), Pohang 790-330, Republic of Korea
  • 3Pohang Accelerator Laboratory (PAL), Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea

  • *To whom correspondence should be addressed. Email address: hmjang@postech.ac.kr

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Issue

Vol. 89, Iss. 8 — 19 August 2002

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