Isotope-Disorder-Induced Line Broadening of Phonons in the Raman Spectra of SiC

S. Rohmfeld, M. Hundhausen, L. Ley, N. Schulze, and G. Pensl
Phys. Rev. Lett. 86, 826 – Published 29 January 2001
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Abstract

The width of phonon lines in the Raman spectra of ideal isotopically pure solids is determined by inelastic scattering processes. In solids that contain a mixture of different isotopes of one atomic constituent, elastic scattering due to isotopic mass disorder opens up decay channels that result in additional line broadening. We use different polytypes of SiC with an associated number of Raman active modes in order to experimentally validate the proportionality between linewidth and phonon density of states predicted by a simple elastic scattering theory.

  • Received 9 August 2000

DOI:https://doi.org/10.1103/PhysRevLett.86.826

©2001 American Physical Society

Authors & Affiliations

S. Rohmfeld, M. Hundhausen, and L. Ley

  • Institut für Technische Physik, Universität Erlangen-Nürnberg, Erwin-Rommel-Straße 1, D-91058 Erlangen, Germany

N. Schulze and G. Pensl

  • Institut für Angewandte Physik, Universität Erlangen-Nürnberg, Staudtstraße 7/A3, D-91058 Erlangen, Germany

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Issue

Vol. 86, Iss. 5 — 29 January 2001

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