Coulomb Gap: How a Metal Film Becomes an Insulator

V. Yu. Butko, J. F. DiTusa, and P. W. Adams
Phys. Rev. Lett. 84, 1543 – Published 14 February 2000
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Abstract

Electron tunneling measurements of the density of states (DOS) in ultrathin Be films reveal that a correlation gap mediates their insulating behavior. In films with sheet resistance R<5000Ω the correlation singularity appears as the usual perturbative ln(V) zero bias anomaly (ZBA) in the DOS. As R is increased further, however, the ZBA grows and begins to dominate the DOS spectrum. This evolution continues until a nonperturbative |V| Efros-Shklovskii Coulomb gap spectrum finally emerges in the highest R films. Transport measurements of films which display this gap are well described by a universal variable range hopping law R(T)=(h/2e2)exp(T0/T)1/2.

  • Received 10 September 1999

DOI:https://doi.org/10.1103/PhysRevLett.84.1543

©2000 American Physical Society

Authors & Affiliations

V. Yu. Butko*, J. F. DiTusa, and P. W. Adams

  • Department of Physics and Astronomy, Louisiana State University, Baton Rouge, Louisiana 70806

  • *Permanent address: Ioffe Physical Technical Institute (PTI), Russian Academy of Sciences, Polytekhnicheskaya Street, 26, 194021, St. Petersburg, Russia.

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Vol. 84, Iss. 7 — 14 February 2000

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