Wetting and Molecular Orientation of 8CB on Silicon Substrates

Lei Xu, Miquel Salmeron, and Sebastien Bardon
Phys. Rev. Lett. 84, 1519 – Published 14 February 2000
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Abstract

The wetting properties of 8CB ( 4n-octyl-4-cyanobiphenyl) on silicon wafers have been studied with scanning polarization force microscopy (SPFM). Layer-by-layer spreading of 8CB droplets is observed. With the help of the surface potential mapping capability of SPFM, we found that the molecular dipole of the first monolayer of 8CB is parallel to the surface. A layer of nearly vertical molecular dimers on top of the monolayer has an associated surface potential of 40 mV, which is attributed to a distortion of the dimer. The dimer distortion propagates to the subsequent smectic bilayers, producing an additional 7 mV potential increase in the second layer, 2 mV on the third, and 1mV on the fourth.

  • Received 25 October 1999

DOI:https://doi.org/10.1103/PhysRevLett.84.1519

©2000 American Physical Society

Authors & Affiliations

Lei Xu and Miquel Salmeron

  • Materials Sciences Division, Lawrence Berkeley National Laboratory, University of California, Berkeley, California 94720

Sebastien Bardon

  • Laboratoire de Physique de La Matière Condensée, Collège de France, 11 Place Marcelin Berthelot, 75231 Paris, France

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Vol. 84, Iss. 7 — 14 February 2000

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