Abstract
We have examined the band gap of a layered BN compound semiconductor. The spectroscopic measurements of scanning tunneling microscopy showed the characteristics of a semiconductor with a band gap energy of 2 eV. The valence band edge measured by x-ray photoelectron spectroscopy was 0.95 eV below the Fermi level. Photoluminescence spectra showed a peak at 2.1 eV at room temperature and 4.2 K. These results were compared with the calculated band structures, and good agreement was obtained. It was concluded that the BN is a semiconductor with a direct band gap which emits visible light.
- Received 21 March 1996
DOI:https://doi.org/10.1103/PhysRevLett.77.187
©1996 American Physical Society