Local interface composition and band discontinuities in heterovalent heterostructures

R. Nicolini; L. Vanzetti; Guido Mula; G. Bratina; L. Sorba; A. Franciosi; M. Peressi; S. Baroni; R. Resta; A. Baldereschi; J. E. Angelo; W. W. Gerberich

doi:10.1103/PhysRevLett.72.294

Local interface composition and band discontinuities in heterovalent heterostructures

R. Nicolini, L. Vanzetti, Guido Mula, G. Bratina, L. Sorba, A. Franciosi, M. Peressi, S. Baroni, R. Resta, A. Baldereschi, J. E. Angelo, and W. W. Gerberich

Phys. Rev. Lett. 72, 294 – Published 10 January 1994

Abstract

The local Zn/Se relative concentration at the interface in ZnSe-GaAs(001) heterostructures synthesized by molecular beam epitaxy was found to be controlled by the Zn/Se flux ratio employed during the early growth stage of ZnSe on GaAs. Correspondingly, the valence band discontinuity varies from 1.20 eV (Zn-rich interface) to 0.58 eV (Se-rich interface). Comparison with the results of first-principles calculations suggests that the observed trend in band offsets is related to the establishment of neutral interfaces with different atomic configurations.

Received 9 July 1993

DOI:https://doi.org/10.1103/PhysRevLett.72.294

Authors & Affiliations

R. Nicolini, L. Vanzetti, Guido Mula, G. Bratina, L. Sorba, and A. Franciosi

Laboratorio Tecnologico Avanzate Superfici e Catalisi del Consorzio–Istituto Nazionale di Fisica della Materia, Area di Ricerca, Padriciano 99, I-34012 Trieste, Italy
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455

M. Peressi