Femtosecond dephasing in CdSxSe1x mixed crystals: The role of localized biexcitons

J.-Y. Bigot, A. Daunois, J. Oberlé, and J.-C. Merle
Phys. Rev. Lett. 71, 1820 – Published 20 September 1993
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Abstract

The dephasing of excitonic localized states is investigated in CdSxSe1x mixed crystals at 2 K with low intensity femtosecond optical pulses. We observe a fast relaxation process which is first reported here. It is shown to be related to the creation of localized biexcitons via the exciton-biexciton transitions which act as an additional dephasing mechanism with a time constant T2exbi of 700 fs. The coherence between excitonic and biexcitonic states, which manifests by 800 fs period beats, is studied in detail. A simple model is presented which describes both the fast initial decay and the beating behavior.

  • Received 1 March 1993

DOI:https://doi.org/10.1103/PhysRevLett.71.1820

©1993 American Physical Society

Authors & Affiliations

J.-Y. Bigot, A. Daunois, J. Oberlé, and J.-C. Merle

  • Groupe d’Optique Nonlinéaire et d’Optoélectronique, Institut de Physique et Chimie des Matériaux de Strasbourg, 5 rue de l’Université, 67084 Strasbourg CEDEX, France

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Vol. 71, Iss. 12 — 20 September 1993

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