Observation of a nonmagnetic hard gap in amorphous In/InOx films in the hopping regime

Ju-Jin Kim and Hu Jong Lee
Phys. Rev. Lett. 70, 2798 – Published 3 May 1993
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Abstract

We measured low temperature conduction characteristics of amorphous indium/indium-oxide composite films deep in the insulating regime. Upon lowering temperature, resistance crosses over from an Efros-Shklovskii variable-range-hopping conduction to a simple activation conduction, with parameters in good agreement with the picture of hardening of a parabolic Coulomb gap near the Fermi level. In contrast to the previous observations in magnetic materials, however, the hard gap in our films is extremely insensitive to a magnetic field, which strongly indicates a nonmagnetic nature of the hard gap.

  • Received 2 December 1992

DOI:https://doi.org/10.1103/PhysRevLett.70.2798

©1993 American Physical Society

Authors & Affiliations

Ju-Jin Kim and Hu Jong Lee

  • Department of Physics, Pohang Instiute of Science and Technology, Pohang, P.O. Box 125, Kyungbuk 790-600, Korea
  • Division of Basic Science Research, Research Institute of Industrial Science and Technology, Pohang, P.O. Box 135, Kyungbuk 790-600, Korea

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Issue

Vol. 70, Iss. 18 — 3 May 1993

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