Logarithmic temperature dependence of resistivity in heavily doped conducting polymers at low temperature

T. Ishiguro, H. Kaneko, Y. Nogami, H. Ishimoto, H. Nishiyama, J. Tsukamoto, A. Takahashi, M. Yamaura, T. Hagiwara, and K. Sato
Phys. Rev. Lett. 69, 660 – Published 27 July 1992
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Abstract

Electrical resistivities of heavily doped polyacetylene and polypyrrole exhibit a wide range of temperature variation as a function of the degree of disorder. Thermal activation behavior is found for the strongly disordered state, while a weak temperature dependence down to the mK region is found for the weakly disordered state. In the intermediate region we found the resistivity represented by a logT dependence, in a manner similar to amorphous metals. As a cause of the logT dependence, the possibility of scattering via interaction with molecular configurations possessing low-energy internal degrees of freedom is considered.

  • Received 18 March 1992

DOI:https://doi.org/10.1103/PhysRevLett.69.660

©1992 American Physical Society

Authors & Affiliations

T. Ishiguro, H. Kaneko, and Y. Nogami

  • Department of Physics, Kyoto University, Kyoto 606-01, Japan

H. Ishimoto and H. Nishiyama

  • Institute for Solid State Physics, The University of Tokyo, Minatoku, Tokyo 106, Japan

J. Tsukamoto and A. Takahashi

  • Polymer Research Laboratory, Toray Ltd., Sonoyama, Otsu 520, Japan

M. Yamaura, T. Hagiwara, and K. Sato

  • Tokyo Research Center of Teijin Ltd., Hino, Tokyo 191, Japan

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Issue

Vol. 69, Iss. 4 — 27 July 1992

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