Atomistic origins of light-induced defects in a-Si

P. A. Fedders, Y. Fu, and D. A. Drabold
Phys. Rev. Lett. 68, 1888 – Published 23 March 1992
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Abstract

We present an atomistic model of light-induced defects (the Staebler-Wronski effect). The model is based in part on our observations of molecular-dynamics simulations with an ab initio code and requires a change in the charge of a well-localized state in the gap, such as a dangling bond, to nucleate a defect. The defects are formed at weak-bond sites in the network following a rearrangement caused by the change of the charge of the localized state.

  • Received 14 November 1991

DOI:https://doi.org/10.1103/PhysRevLett.68.1888

©1992 American Physical Society

Authors & Affiliations

P. A. Fedders and Y. Fu

  • Department of Physics, Washington University, St. Louis, Missouri 63130

D. A. Drabold

  • Department of Materials Science and Engineering, University of Illinois, Urbana, Illinois 61801

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Vol. 68, Iss. 12 — 23 March 1992

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