ErAs epitaxial layers buried in GaAs: Magnetotransport and spin-disorder scattering

S. J. Allen, Jr., N. Tabatabaie, C. J. Palmstrøm, G. W. Hull, T. Sands, F. DeRosa, H. L. Gilchrist, and K. C. Garrison
Phys. Rev. Lett. 62, 2309 – Published 8 May 1989
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Abstract

A detailed magnetotransport study of novel heterostructures comprised of epitaxial layers of semimetallic ErAs buried inside GaAs displays a cusplike anomaly in the magnetoresistance that is caused by spin-disorder scattering at the antiferromagnetic-paramagnetic phase boundary. The relatively low carrier concentration spares the Fermi surface from being cut by the broken symmetry and only spin disorder contributes to the anomaly.

  • Received 19 January 1989

DOI:https://doi.org/10.1103/PhysRevLett.62.2309

©1989 American Physical Society

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Vol. 62, Iss. 19 — 8 May 1989

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