Electronic Structure and Optical Properties of Si-Ge Superlattices

K. B. Wong; M. Jaros; I. Morrison; J. P. Hagon

doi:10.1103/PhysRevLett.60.2221

Electronic Structure and Optical Properties of Si-Ge Superlattices

K. B. Wong, M. Jaros, I. Morrison, and J. P. Hagon

Phys. Rev. Lett. 60, 2221 – Published 23 May 1988

Abstract

We report pseudopotential calculations of the electronic structure of a ${Si}_{4}$ ${Ge}_{4}$ (001) superlattice grown on a Si substrate. Our results show that it is possible to account for the observed optical spectra, without invoking indirect transitions, in terms of a model in which the microscopic potential and the bond lengths in the Ge layer are bulklike.