Muon Channeling in Semiconductors: Evidence for Pionium Formation

G. Flik; J. N. Bradbury; D. W. Cooke; R. H. Heffner; M. Leon; M. A. Paciotti; M. E. Schillaci; K. Maier; H. Rempp; J. J. Reidy; C. Boekema; H. Daniel

doi:10.1103/PhysRevLett.57.563

Muon Channeling in Semiconductors: Evidence for Pionium Formation

G. Flik, J. N. Bradbury, D. W. Cooke, R. H. Heffner, M. Leon, M. A. Paciotti, M. E. Schillaci, K. Maier, H. Rempp, J. J. Reidy, C. Boekema, and H. Daniel

Phys. Rev. Lett. 57, 563 – Published 4 August 1986

Abstract

Muon-channeling profiles resulting from the decay of positive pions implanted in high-purity Ge and GaAs single crystals with and without illumination have been measured. The change in profiles with illumination demonstrates that the pion decay site is sensitive to the concentration of excess charge carriers produced by photon absorption. This site change is explained in terms of different electronic states of the pion, i.e., bare $π^{+}$ and pionium.

Received 31 January 1986

DOI:https://doi.org/10.1103/PhysRevLett.57.563

Authors & Affiliations

G. Flik, J. N. Bradbury, D. W. Cooke, R. H. Heffner, M. Leon, M. A. Paciotti, and M. E. Schillaci

Los Alamos National Laboratory, Los Alamos, New Mexico 87545

K. Maier and H. Rempp

Max-Planck-Institut für Metallforschung, Institut für Physik, and Institut für Theoretische und Angewandte Physik, Universität Stuttgart, 7000 Stuttgart, West Germany

J. J. Reidy